2SD880 transistor (npn) features power dissipation p cm: 1.5 w (tamb=25 ) collector current i cm: 3 a collector-base voltage v (br)cbo : 60 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v(br) cbo ic=100a, i e =0 60 v collector-emitter breakdown voltage v(br) ceo ic=50ma, i b =0 60 v emitter-base breakdown voltage v(br) ebo i e = 100a, i c =0 7 v collector cut-off current i cbo v cb =60v, i e =0 100 a emitter cut-off current i ebo v eb =7v, i c =0 100 a dc current gain h fe v ce =5v, i c =500ma 60 300 collector-emitter saturation voltage v ce (sat) i c =3a, i b =300ma 1 v base-emitter saturation voltage v be i c =0.5a, v ce = 5v 1 v transition frequency f t v ce =5 v, i c =500ma 3 mhz collector output capacitance c ob v ce =10v, i e =0, f=1mhz 70 pf turn on time t on 0.8 s storage time t s 1.5 s fall time t f i b1 =-i b2 =0.2a, i c =2a v cc =30v, pw=20s 0.8 s classification of h fe rank o y gr range 60-120 100-200 150-300 1 2 3 to220 1. base 2. collector 3. emitter 2SD880 http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
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